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HGTG34N100E2
April 1995
34A, 1000V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE
Features
* 34A, 1000V * Latch Free Operation * Typical Fall Time - 710ns * High Input Impedance * Low Conduction Loss
COLLECTOR (BOTTOM SIDE METAL)
Description
The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY PART NUMBER HGTG34N100E2 PACKAGE TO-247 BRAND G34N100E2
E G
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA9895.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTG34N100E2 1000 1000 55 34 200 20 30 200A at 0.8 BVCES 208 1.67 -55 to +150 260 3 10 UNITS V V A A A V V W W/oC oC oC s s
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage, RGE =1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 15V, at TC = +90oC . . . . . . . . . . . . . . . . . . . IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PEAK) = 600V, TC = +125oC, RGE = 25. INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
File Number
2827.3
3-124
Specifications HGTG34N100E2
Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Voltage SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = 0.8 BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC90, VGE = 15V TC = +25oC TC = +125oC TC = +25oC TC = +125oC TC = +25oC TC = +125oC TC = +25oC MIN 1000 3.0 TYP 2.8 2.8 2.9 3.0 4.5 MAX 1.0 4.0 3.2 3.1 3.3 3.4 6.0 UNITS V mA mA V V V V V
IC = IC90, VGE = 10V
Gate-Emitter Threshold Voltage
VGE(TH)
IC = 1mA, VCE = VGE VGE = 20V
Gate-Emitter Leakage Current Gate-Emitter Plateau Voltage On-State Gate Charge
IGES VGEP QG(ON)
-
7.3 185 240 100 150 610 710 7.1 100 150 460 670 6.5 0.5
500 240 315 795 925 600 870 0.6
nA V nC nC ns ns ns ns mJ ns ns ns ns mJ
oC/W
IC = IC90, VCE = 0.5 BVCES IC = IC90, VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy (Note 1) Current Turn-On Delay Time Current Rise Time Current Turn-Off Current Fall Time Turn-Off Energy (Note 1) Thermal Resistance
tD(ON)I tRI tD(OFF)I tFI WOFF tD(ON)I tRI tD(OFF)I tFI WOFF RJC
L = 50H, IC = IC90, RG = 25, VGE = 15V, TJ = +125oC, VCE = 0.8 BVCES
L = 50H, IC = IC90, RG = 25, VGE = 10V, TJ = +125oC, VCE = 0.8 BVCES
-
NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A) The HGTG34N100E2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
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HGTG34N100E2 Typical Performance Curves
100 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 TC = -40oC TC = +25oC TC = +150oC PULSE DURATION = 250s DUTY CYCLE < 0.5%, VCE = 10V 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE = 6.5V VGE = 6.0V VGE = 7.0V VGE = 8.0V VGE = 15V VGE = 10V PULSE DURATION = 250s DUTY CYCLE < 0.5% TC = +25oC
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
60 ICE, DC COLLECTOR CURRENT (A)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
2.0 VGE = 10V AND 15V, TJ = +150oC, RG = 25, L = 50H
50 VGE = 15V 40 VGE = 10V 30 tFI , FALL TIME (s) 1.5 VCE = 800V 1.0 VCE = 400V 0.5 10
20
0 +25
0.0 +50 +75 +100 +125 +150 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 TC , CASE TEMPERATURE (oC)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE (V)
10000 f = 1MHz 8000 CISS 6000
1000 VCC = BVCES 750 VCC = BVCES
10 VGE, GATE-EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
7.5
500
0.75 BVCES 0.50 BVCES 0.25 BVCES
0.75 BVCES 0.50 BVCES 0.25 BVCES
5.0
4000 COSS
250
2000
CRSS
RL = 29.4 IG(REF) = 4.0mA VGE = 10V IG(REF) IG(ACT) IG(REF) IG(ACT)
2.5
0 20
0 TIME (s) 80
0 0 5 10 15 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 25
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260)
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HGTG34N100E2 Typical Performance Curves (Continued)
7 VCE(ON), SATURATION VOLTAGE (V) 6 5 VGE = 10V 4 3 VGE = 15V 2 1 0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 WOFF , TURN-OFF SWITCHING LOSS (mJ) TJ = +150oC 100 TJ = +150oC, RG = 25, L = 50H
10 VCE = 800V, VGE = 10V AND 15V
1.0
VCE = 400V, VGE = 10V AND 15V
0.1 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT
2.0 tD(OFF)I , TURN-OFF DELAY (s) TJ = +150oC VCE = 800V L = 50H 1.5 VGE = 10V, RG = 50 1.0 VGE = 15V, RG = 25 VGE = 15V, RG = 50
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT
100 fOP , OPERATING FREQUENCY (kHz) VCE = 400V VGE = 15V fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF DUTY FACTOR = 50% RJC = 0.5oC/W
10
VCE = 800V VGE = 15V
0.5 VGE = 10V, RG = 25 0.0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100
TJ = +150oC, TC = +75oC, RG = 25, L = 50H 1 1 NOTE: PD = ALLOWABLE DISSIPATION 10 ICE, COLLECTOR-EMITTER CURRENT (A) PC = CONDUCTION DISSIPATION 80
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE
100 ICE , COLLECTOR-EMITTER CURRENT (A) VGE = 10V
10
TJ = +25oC TJ = +150oC
1 0 1 2 3 4 5 6 7 VCE(ON), SATURATION VOLTAGE (V)
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
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HGTG34N100E2 Test Circuit
L = 50H
1/RG = 1/RGEN + 1/RGE RGEN = 50
VCC 800V
+ -
20V 0V RGE = 50
FIGURE 12. INDUCTION SWITCHING TEST CIRCUIT
Operating Frequency Information
Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/WOFF . The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) and the conduction losses (PC) are approximated by PC = (VCE * ICE)/2. WOFF is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The switching power loss (Figure 10) is defined as fMAX2 * WOFF. Turn-on switching losses are not included because they can be greatly influenced by external circuit conditions and components.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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